Applications
Primarily used for the pressure sintering process of nano-materials in the packaging of SiC chips, enabling low-temperature, efficient, non-destructive, and reliable bonding. It’s particularly suitable for applications such as R&D of nano-material and sintering process.
Features
Precise temperature control (±1℃)
Precise force control (±0.5kg~±5kg)
Patented head leveling design
Advanced water cooling stage
Oxygen-free process environment
Automatic film feeding system
Specifications
Sintering Head: Single
Working Area: 68mmx68mm (Customizable)
Sintering Temperature: Up to 350℃, accuracy ±1℃
Sintering Force: 5±0.5kg~800±5kg (higher on request)
Process Environment: Oxygen-free or inert gas atmosphere
Cooling System: Water-cooled, adjustable temperature
Control System: IPC control, supports user MES systems
Dimension：W1150mm×D1000mm×H1600mm（excluding touchscreen and tower lamp）
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